MDS1101 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 12V, 15A, 8m(ohm)

Ordering Information
Part Number
MDS1101URH
Temp. Range
-55~150^oC
Package
SOIC-8
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (T_J =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = 4.5V, ID = 15A
VGS = 2.8V, ID = 12A
VDS = 6V, ID = 12A
VDD = 10V, ID = 12A,
VGS = 4.5V
VDS = 6V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V, VDD = 6.0V,
ID = 12A, RG =18Ω,
f=1 MHz
IS = 1A, VGS = 0V
IF = 12A, dl/dt = 100A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 25 A, VDD = 27V, VGS = 10V
Min
Typ.
Max
Unit
12
-
-
V
0.6
-
1.9
-
-
1
uA
-
-
±200
nA
-
4.1
8.0
mΩ
-
6.4
30
85
-
-
S
23
-
6.8
-
nC
-
3.9
-
-
3,900
-
-
250
-
pF
-
1,634
-
-
15
-
-
11
-
ns
-
43
-
-
12
-
0.5
1.0
2.0
Ω
-
0.6
1.0
V
-
38
-
ns
-
64
-
nC
Apr. 2016. Ver. 1.0
2
MagnaChip Semiconductor Ltd.