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| MDQ23N50D Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 23.0A, 0.245(ohm) | |||
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10
â» Note : ID = 23A
8
6
100V
250V
400V
4
2
0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
10 µs
100 µs
1 ms
10 ms
100 ms
DC
100
10-1
10-1
Single Pulse
TJ=Max rated
TC=25â
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
6000
5000
4000
3000
2000
1000
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
24
22
20
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current vs. Case
Temperature
100
D=0.5
10-1 0.2
0.1
0.05
0.02
10-2 0.01
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JC=0.43â/W
10-5
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
50000
single Pulse
RthJC = 0.43â/W
TC = 25â
0
1E-5
1E-4
1E-3
0.01
0.1
1
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Dec. 2012. Ver 1.0
4
MagnaChip Semiconductor Ltd.
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