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| MDQ23N50D Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 23.0A, 0.245(ohm) | |||
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Ordering Information
Part Number
MDQ23N50DTP
Temp. Range
-55~150oC
Package
TO-247
Packing
Tube
RoHS Status
Pb Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage BVDSS
Gate Threshold Voltage
Drain Cut-Off Current
VGS(th)
IDSS
Gate Leakage Current
Drain-Source ON Resistance
IGSS
RDS(ON)
Forward Transconductance
gfs
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuos Drain to
Source Diode Forward Current
IS
Source-Drain Diode Forward
Voltage
VSD
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 11.5A
VDS = 30V, ID = 11.5A
VDS = 400V, ID = 23A, VGS = 10V
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 23A,
RG = 25â¦
IS = 23A, VGS = 0V
IF = 23A, dl/dt = 100A/µs(3)
Min Typ Max Unit
500
-
-
V
2.0
-
4.0
-
-
1
µA
-
-
100 nA
-
0.2 0.245 â¦
-
13
-
S
-
76
-
-
16
-
nC
-
20
-
-
3280
-
-
23
-
pF
-
325
-
-
50
-
-
155
-
ns
-
230
-
-
195
-
-
-
23
A
-
-
1.4
V
-
450
-
ns
-
6
-
µC
Notes :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width â¤300us, duty cycleâ¤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD â¤23A, di/dtâ¤200A/us, VDDâ¤BVdss, Rg =25â¦, Starting TJ=25°C
4. L=3.24mH, IAS=23A, VDD=50V, Rg =25â¦, Starting TJ=25°C
Dec. 2012. Ver 1.0
2
MagnaChip Semiconductor Ltd.
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