MDQ23N50D Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 23.0A, 0.245(ohm)

MDQ23N50D
N-Channel MOSFET 500V, 23.0A, 0.245Ω
General Description
.
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
V_DS = 500V
I_D
= 23.0A
R_DS(ON) ≤ 0.245Ω
Applications
Power Supply
HID
Lighting
@ V_GS = 10V
@ V_GS = 10V
D
TO-247
S
D
G
G
S
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current⁽¹⁾
Power Dissipation
Repetitive Avalanche Energy⁽¹⁾
Peak Diode Recovery dv/dt⁽³⁾
Single Pulse Avalanche Energy⁽⁴⁾
Junction and Storage Temperature Range
* I_D limited by maximum junction temperature
T_C=25^oC
T_C=100^oC
T_C=25^oC
Derate above 25 ^oC
Symbol
V_DSS
V_GSS
I_D
I_DM
P_D
E_AR
dv/dt
E_AS
T_J, T_stg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient⁽¹⁾
Thermal Resistance, Junction-to-Case⁽¹⁾
Symbol
R_θJA
R_θJC
Dec. 2012. Ver 1.0
1
Rating
500
±30
23
14.6
92
290
2.33
29
4.5
950
-55~150
Unit
V
V
A
A
A
W
W/ ^oC
mJ
V/ns
mJ
o_C
Rating
40
0.44
Unit
o_C/W
MagnaChip Semiconductor Ltd.