MDQ23N50D Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 23.0A, 0.245(ohm)

65
60 V_gs=4.5V
55
=5.0V
=6.0V
50
=7.0V
=8.0V
45
=10.0V
40
=15.0V
Notes
1. 250㎲ Pulse Test
2. T_C=25℃
35
30
25
20
15
10
5
0
0
5
10
15
20
25
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. V_GS = 10 V
2. I_D = 23A
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
0.6
0.5
0.4
0.3
Vgs=10V
0.2
Vgs = 20V
0.1
0.0
10
20
30
40
50
60
I_D Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V_GS = 0 V
2. I_D = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
100
* Notes ;
1. Vds=30V
10
150℃
1
25℃
-55℃
※ Notes :
1. V_GS = 0 V
2.250µs Pulse test
10
150℃
1
25℃
0.1
2
3
4
5
6
7
8
V_GS [V]
Fig.5 Transfer Characteristics
Dec. 2012. Ver 1.0
3
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.