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| MDP7N60B Datasheet, PDF (4/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 7.0A, 1.15(ohm) | |||
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10
â» Note : ID = 7.0A
8
6
120V
300V
480V
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
101
1 ms
10 ms
100 ms
DC
100
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25â
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
MDP7N60B(TO-220)
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100
10 µs
100 µs
1 ms
10 ms
1s 100 ms
DC
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25â
100
101
102
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Safe Operating Area
MDF7N60B(TO-220F)
100
D=0.5
0.2
0.1
10-1
0.05
10-2
10-5
0.02
0.01
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JC=0.95â/W
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
MDP7N60B(TO-220)
Oct. 2010 Version 1.3
4
D=0.5
100
0.2
0.1
0.05
10-1
10-2
10-5
0.02
0.01
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JC=3.01â/W
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.12 Transient Thermal Response Curve
MDF7N60B(TO-220F)
MagnaChip Semiconductor Ltd.
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