MDP7N60B Datasheet, PDF (3/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 7.0A, 1.15(ohm)

14
12
V_gs=15.0V
=10.0V
=8.0V
=7.0V
10
=6.5V
=6.0V
8
=5.5V
=5.0V
6
4
Notes
2
1. 250㎲ PulseTest
2. T_C=25℃
0
0
5
10
15
20
25
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. V_GS = 10 V
2. I_D = 3.5A
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
2.2
2.0
1.8
V_GS=10.0V
1.6
V_GS=20V
1.4
1.2
1.0
0
3
6
9
12
15
I_D,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V_GS = 0 V
2. I_D = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
150℃
-55℃
1
25℃
※ Notes :
1. V_GS = 0 V
10
2.250µs Pulse test
150℃
1
25℃
0.1
2
4
6
V_GS [V]
Fig.5 Transfer Characteristics
Oct. 2010 Version 1.3
8
3
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.