English
Language : 

MDP7N60B Datasheet, PDF (2/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 7.0A, 1.15(ohm)
◁
Ordering Information
Part Number
MDP7N60BTH
MDF7N60BTH
Temp. Range
-55~150oC
-55~150oC
Package
TO-220
TO-220F
Packing
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta = 25oC
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
IS
Source-Drain Diode Forward
Voltage
VSD
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 3.5A
VDS = 30V, ID = 3.5A
VDS = 480V, ID = 7.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 7.0A,
RG = 25Ω(3)
IS = 7.0A, VGS = 0V
IF = 7.0A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=8.2mH, IAS=7.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Min
Typ
Max Unit
600
-
2.0
-
-
V
4.0
-
-
1
µA
-
-
100
nA
1.0
1.15
Ω
-
7.5
-
S
-
20.1
-
-
4.5
-
nC
-
7.9
-
-
800
-
-
5
-
pF
-
90
-
-
17
-
-
27
-
ns
-
64
-
-
33
-
-
7
-
A
-
1.4
V
-
345
-
ns
-
3.2
-
µC
Oct. 2010 Version 1.3
2
MagnaChip Semiconductor Ltd.
 ▷