MDP7N60B Datasheet, PDF (1/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 7.0A, 1.15(ohm)

MDP7N60B / MDF7N60B
N-Channel MOSFET 600V, 7.0A, 1.15Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
V_DS = 600V
V_DS = 660V
I_D = 7.0A
R_DS(ON) ≤ 1.15Ω
Applications
@ T_jmax
@ V_GS = 10V
@ V_GS = 10V
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current⁽¹⁾
Power Dissipation
Repetitive Avalanche Energy⁽¹⁾
Peak Diode Recovery dv/dt⁽³⁾
Single Pulse Avalanche Energy⁽⁴⁾
T_C=25^oC
T_C=100^oC
T_C=25^oC
Derate above 25 ^oC
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
G
S
Symbol
V_DSS
V_DSS @ T_jmax
V_GSS
I_D
I_DM
P_D
E_AR
dv/dt
E_AS
T_J, T_stg
MDP7N60B MDF7N60B
600
660
±30
7.0
7.0*
4.4
4.4*
28
28*
131
42
1.05
0.33
13.1
4.5
220
-55~150
Unit
V
V
V
A
A
A
W
W/ ^oC
mJ
V/ns
mJ
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient⁽¹⁾
Thermal Resistance, Junction-to-Case⁽¹⁾
Symbol
R_θJA
R_θJC
MDP7N60B
62.5
0.95
MDF7N60B
62.5
3.01
Unit
o_C/W
Oct. 2010 Version 1.3
1
MagnaChip Semiconductor Ltd.