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| MDP7N50 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 7.0 A, 0.9(ohm) | |||
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10
â» Note : ID = 7.0A
8
6
100V
250V
400V
4
2
0
0
2
4
6
8 10 12 14 16 18 20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
101
is Limited by R
DS(on)
100
100 µs 10 µs
1 ms
10 ms
100 ms
DC
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25â
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
1600
1400
Coss
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
Ciss
800
600
400
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
200
0
0.1
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current vs. Case
Temperature
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JC=1.1â/W
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
14000
12000
10000
single Pulse
RthJC = 1.1â/W
TC = 25â
8000
6000
4000
2000
0
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Dec2009. Version 1.1
4
MagnaChip Semiconductor Ltd.
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