MDP7N50 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)

20
18
V_gs=5.5V
=6.0V
16
=6.5V
=7.0V
14
=8.0V
=10.0V
12
10
Notes
8
1. 250㎲ Pulse Test
6
2. T_C=25℃
4
2
0
0 2 4 6 8 10 12 14 16 18 20
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1.6
1. V_GS = 10 V
2. I_D = 5 A
1.4
1.2
1.0
V_GS=10V
V_GS=4.5V
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
1.75
1.50
1.25
1.00
V_GS=10.0V
V_GS=20V
0.75
0.50
0
5
10
15
20
I_D,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V_GS = 0 V
2. I_D = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. V_DS=30V
10
150℃
25℃
-55℃
1
4
5
6
7
8
9
10
V_GS [V]
Fig.5 Transfer Characteristics
Dec2009. Version 1.1
3
100
※ Notes :
1. V = 0 V
GS
2. I_D = 250㎂
10
150℃
1
25℃
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
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