MDP7N50 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)

Ordering Information
Part Number
MDP7N50
Temp. Range
-55~150^oC
Package
TO-220
Packing
Tube
Electrical Characteristics (Ta =25^oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 3.5A
VDS = 30V, ID = 3.5A
VDS = 400V, ID = 7.0A, VGS = 10V⁽³⁾
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 7.0A,
RG = 25Ω⁽³⁾
IS = 7.0A, VGS = 0V
IF = 7.0A, dl/dt = 100A/µs⁽³⁾
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤7.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=10mH, IAS=7.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Min Typ
500
-
3.0
-
-
-
-
-
0.76
-
7
-
17.5
-
5
-
6.5
-
740
-
3.7
-
95.5
- 16.8
-
29.8
-
36.4
-
23.6
-
7.0
-
-
260
-
1.7
Max Unit
-
V
5.0
1
µA
100 nA
0.9
Ω
-
S
nC
pF
ns
-
A
1.4
V
ns
µC
Dec2009. Version 1.1
2
MagnaChip Semiconductor Ltd.