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MDP7N50 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)
MDP7N50
N-Channel MOSFET 500V, 7.0 A, 0.9Ω
General Description
The MDP7N50 uses advanced Magnachip’s
MOSFET Technology, which provides low on-
state resistance, high switching performance
and excellent quality.
MDP7N50 is suitable device for SMPS, HID
and general purpose applications.
Features
VDS = 500V
ID = 7.0A @VGS = 10V
RDS(ON) < 0.9Ω @VGS = 10V
Applications
Power Supply
HID
Lighting
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec2009. Version 1.1
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
±30
7.0
4.2
28
114
0.91
4.5
270
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
1.1
Unit
oC/W
1
MagnaChip Semiconductor Ltd.