 English |
|
|
|
|
|
|
|
| MDP1901 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 36A, 22m(ohm) | |||
| |||
| ◁ |
10
9
* Note ; ID = 20A
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
Qg [nC]
Fig.7 Gate Charge Characteristics
102
100us
101
1 ms
Operation in This Area
is Limited by R DS(on)
100
Single Pulse
Rθ jC=2.3â /W
Ta=25â
10-1
10-1
100
101
V [V]
DS
10 ms
100ms
DC
102
Fig.9 Maximum Safe Operating Area
101
100
D=0.5
0.2
10-1 0.1
0.05
0.02
10-2 0.01
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ Ja* Rθ J(at) + Ta
RÎ JC=2.3â /W
single pulse
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t , Rectangular Pulse Duration [sec]
1
Fig.11 Transient Thermal Response Curve
5000
4500
4000
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
3500
Ciss
3000
2500
2000
1500
* Notes ;
1. VGS = 0 V
2. f = 1 MHz
1000
Coss
500
C
rss
0
0
5
10
15
20
25
30
35
40
V [V]
DS
Fig.8 Capacitance Characteristics
40
30
20
10
0
25
50
75
100
125
150
TC [â ]
Fig.10 Maximum Drain Current vs. Case
Temperature
August. 2010. Version 1.2
4
MagnaChip Semiconductor Ltd.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese