MDP1901 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 36A, 22m(ohm)

MDP1901
Single N-channel Trench MOSFET 100V, 36A, 22mΩ
General Description
The MDP1901 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1901 is suitable device for DC/DC Converters
and general purpose applications.
Features
 VDS = 100V
 ID = 36A @VGS = 10V

RDS(ON)
< 22mΩ @VGS = 10V
< 25mΩ @VGS = 6.0V
D
GDS
G
S
Absolute Maximum Ratings (Tc = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
TC=25^oC
TC=100^oC
TC=25^oC
TC=100^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
100
V
±20
V
36
A
24
A
144
A
34
W
14
200
mJ
-55~150
o_C
Symbol
RθJA
RθJC
Rating
40
2.3
Unit
o_C/W
August. 2010. Version 1.2
1
MagnaChip Semiconductor Ltd.