MDP1901 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 36A, 22m(ohm)

Ordering Information
Part Number
MDP1901TH
Temp. Range
-55~150^oC
Package
TO-220
Packing
Tube
Rohs Status
Halogen Free
Electrical Characteristics (Tc =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg
Qgs
Qgd
Ciss
Crss
Coss
Rg
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 35A
TJ=125^oC
VGS = 6.0V, ID = 20A
VDS = 5V, ID = 35A
VDS = 50V, ID = 20A,
VGS = 10V
VDS = 30V, VGS = 0V,
f = 1.0MHz
VGS=0V,VDS=0V,F=1MHz
VGS = 10V, VDS = 50V,
RL = 30Ω, RG = 6Ω
IS = 1A, VGS = 0V
IF = 20A, dl/dt = 100A/μs
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ=25°C, L=1mH, IAS=20A, VDD=50V, VGS=10V
Min Typ
Max Unit
100
-
-
V
2.0
2.8
4.0
-
-
1
μA
-
-
±0.1
-
17
22
-
28
33
mΩ
19
25
-
35
-
S
-
75
110
-
20
-
nC
-
18
-
-
3045
-
-
160
-
pF
-
234
-
-
0.81
-
Ω
-
25
40
-
12
20
ns
-
70
120
-
20
35
-
0.7
1.2
V
-
70
100
ns
-
240
-
nC
August. 2010. Version 1.2
2
MagnaChip Semiconductor Ltd.