MDP1901 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 36A, 22m(ohm)

100
6.0V ~ 10V
80
5.0V
60
4.5V
40
20
4.0V
3.5V
0
0
1
2
3
4
5
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
V =10V
GS
I =35A
D
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
40
30
V_GS=6.0V
20
V_GS=10V
10
0
10
20
30
40
I_D [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
70
60
50
40
125℃
30
20
25℃
10
0
4
6
8
10
V_GS [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
*Note ; VDS=5.0V
15
10
5
125℃
25℃
0
0
1
2
3
4
5
V [V]
GS
Fig.5 Transfer Characteristics
August. 2010. Version 1.2
3
10
1
0.1
0.01
1E-3
1E-4
125℃
25℃
1E-5
1E-6
0.0
0.2
0.4
0.6
0.8
1.0
V [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.