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| MDP16N50G Datasheet, PDF (4/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 16.0 A, 0.35(ohm) | |||
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10
â» Note : ID = 16A
8
100V
250V
400V
6
4
2
0
0
5
10
15
20
25
30
35
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R
DS(on)
101
100
10 ïs
100 ïs
1 ms
10 ms
100 ms
DC
10-1
Single Pulse
TJ=Max rated
T =25â
C
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
MDP16N50G (TO-220)
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t /t
12
PEAK
T
J
=
P
DM
*
Zθ
JC*
Rθ
JC(t)
+
T
C
RÎ JC=0.61â/W
10-5
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
MDP16N50G (TO-220)
4000
Coss
3500
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
3000
2500
Ciss
2000
1500
1000
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
500
Crss
0
1E11
1E12
1E13
V , Drain-Source Voltage [V]
DS
Fig.8 Capacitance Characteristics
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current vs. Case
Temperature
24000
21000
18000
single Pulse
RthJC = 0.61â/W
TC = 25â
15000
12000
9000
6000
3000
0
1E-5
1E-4
1E-3
0.01
0.1
1
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation MDP16N50G (TO-220)
Dec. 2014. Version 1.1
4
MagnaChip Semiconductor Ltd.
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