MDP16N50G Datasheet, PDF (3/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 16.0 A, 0.35(ohm)

35 _Vgs=5.5V
=6.0V
30
=6.5V
=7.0V
=8.0V
25
=10.0V
=15.0V
20
Notes
1. 250㎲ Pulse Test
2. T_C=25℃
15
10
5
0
0
10
20
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
1. V = 10 V
2.5
GS
2. I = 8A
D
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
0.7
0.6
0.5
V_GS=10.0V
V_GS=20V
0.4
0.3
10
15
20
25
30
35
40
I_D,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V_GS = 0 V
2. I_D = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. V_DS=30V
10
150℃ _25℃
-55℃
1
4
5
6
7
8
9
V [V]
GS
Fig.5 Transfer Characteristics
Dec. 2014. Version 1.1
3
※ Notes :
1. V_GS = 0 V
2. 250㎲ Pulse Test
10
150^oC
25^oC
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.