MDP16N50G Datasheet, PDF (2/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 16.0 A, 0.35(ohm)

Ordering Information
Part Number
Temp. Range
MDP16N50GTH
-55~150^oC
MDF16N50GTH
-55~150^oC
Package
TO-220
TO-220F
Packing
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta =25^oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
IS
Source-Drain Diode Forward
Voltage
VSD
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 8A
VDS = 30V, ID = 8A
VDS = 400V, ID = 16A, VGS = 10V⁽³⁾
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 16A,
RG = 25Ω⁽³⁾
IS = 16A, VGS = 0V
IF = 16A, dl/dt = 100A/μs⁽³⁾
Notes :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤16.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=5.48mH, IAS=16.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min Typ Max Unit
500
-
3.0
-
-
V
5.0
-
-
1
μA
-
-
100 nA
0.30 0.35 Ω
-
14.8 -
S
-
34.9
-
12.4
nC
-
14.2
-
1724
-
8.3
pF
-
226
-
46
-
88.5
ns
-
96.5
-
41
-
16
-
A
-
1.4
V
-
325
ns
-
3.34
μC
Dec. 2014. Version 1.1
2
MagnaChip Semiconductor Ltd.