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| MDP16N50G Datasheet, PDF (1/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 500V, 16.0 A, 0.35(ohm) | |||
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MDP16N50G / MDF16N50G
N-Channel MOSFET 500V, 16.0 A, 0.35â¦
General Description
These N-channel MOSFET are produced using advanced
MagnaChipâs MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
ï® VDS = 500V
ï® VDS = 550V
@ Tjmax
ï® ID = 16A
@VGS = 10V
ï® RDS(ON) ⤠0.35Ω @VGS = 10V
Applications
ï® Power Supply
ï® HID
ï® Lighting
D
TO-220
MDP Series
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25
oC
G
S
Symbol
VDSS
VDSS @Tjmax
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP16N50G MDF16N50G
500
550
±30
16
16*
10.1
10.1*
64
64*
204.9
49.4
1.64
0.39
Unit
V
V
V
A
A
A
W
W/ oC
20.5
4.5
780
-55~150
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec. 2014. Version 1.1
Symbol
RθJA
RθJC
MDP16N50G
62.5
0.61
MDF16N50G
62.5
2.53
Unit
oC/W
1
MagnaChip Semiconductor Ltd.
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