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| MDP15N60G Datasheet, PDF (4/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 15A, 0.40(ohm) | |||
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10
â» Note : ID = 15.0A
8
120V
300V
480V
6
4
2
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
10 ïs
100 ïs
1 ms
101
10 ms
100 ms
DC
100
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25â
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
MDP15N60G(TO-220)
5000
4000
Coss
3000
Ciss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
2000
1000
C
rss
â» Notes ;
1. V = 0 V
GS
2. f = 1 MHz
0
1
10
V , Drain-Source Voltage [V]
DS
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R DS(on)
10 ïs
100 ïs
101
1 ms
10 ms
1s 100 ms
100
DC
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25â
100
101
102
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Safe Operating Area
MDF15N60G(TO-220F)
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK
T
J
=
P
DM
*
Zθ
JC*
Rθ
JC(t)
+
T
C
R
Î
JC=0.54â
/W
10-5
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
MDP15N60G(TO-220)
Jun. 2011 Version 1.1
4
D=0.5
100
0.2
0.1
0.05
10-1
10-2
10-5
0.02
0.01
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JC=3.4â /W
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.12 Transient Thermal Response Curve
MDF15N60G(TO-220F)
MagnaChip Semiconductor Ltd.
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