MDP15N60G Datasheet, PDF (3/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 15A, 0.40(ohm)

40
V_gs=5.5V
=6.0V
=6.5V
30
=7.0V
=7.5V
=8.0V
=10.0V
=15.0V
20
Notes
10
1. 250㎲ Pulse Test
2. T_C=25℃
0
5
10
15
20
V ,Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. V_GS = 10 V
2. I_D = 7.5 A
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
0.7
0.6
0.5
V =10.0V
GS
0.4
V_GS=20V
0.3
9 12 15 18 21 24 27 30 33 36 39 42 45
I ,Drain Current [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V = 0 V
GS
2. I = 250㎂
D
1.1
1.0
0.9
0.8
-50
0
50
100
150
T_J, Junction Temperature [^oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
150℃
25℃
-55℃
10
※ Notes :
1. V = 0 V
GS
2.250s Pulse test
150℃
25℃
10
4
6
8
10
V_GS [V]
Fig.5 Transfer Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jun. 2011 Version 1.1
3
MagnaChip Semiconductor Ltd.