MDP15N60G Datasheet, PDF (1/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 15A, 0.40(ohm)

MDP15N60G / MDF15N60G
N-Channel MOSFET 600V, 15A, 0.40Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
 VDS = 600V
 ID = 15A
 RDS(ON) ≤ 0.40Ω
@ VGS = 10V
@ VGS = 10V
Applications
 Power Supply
 PFC
 High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
G
S
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current⁽²⁾
Power Dissipation
Repetitive Avalanche Energy⁽²⁾
Peak Diode Recovery dv/dt⁽³⁾
Single Pulse Avalanche Energy⁽⁴⁾
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25^oC
TC=100^oC
TC=25^oC
Derate above 25 ^oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient⁽¹⁾
Thermal Resistance, Junction-to-Case⁽¹⁾
Jun. 2011 Version 1.1
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP15N60G MDF15N60G
600
±30
15
15*
9.5
9.5*
60
60*
231.4
36.7
1.85
0.29
23.1
4.5
511
-55~150
Unit
V
V
A
A
A
W
W/ ^oC
mJ
V/ns
mJ
o_C
Symbol
RθJA
RθJC
MDP15N60G
62.5
0.54
MDF15N60G
62.5
3.4
Unit
o_C/W
MagnaChip Semiconductor Ltd.