MDP15N60G Datasheet, PDF (2/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 15A, 0.40(ohm)

Ordering Information
Part Number
MDP15N60GTH
MDF15N60GTH
Temp. Range
-55~150^oC
-55~150^oC
Package
TO-220
TO-220F
Packing
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta =25^oC)
Characteristics
Symbol
Test Condition
Min
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
600
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
3.0
Drain Cut-Off Current
IDSS
VDS = 600V, VGS = 0V
-
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 7.5A
-
Forward Transconductance
gfs
VDS = 30V, ID = 7.5A ⁽²⁾
-
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Qg
-
Qgs
VDS = 480V, ID = 15.0A, VGS = 10V ⁽²⁾
-
Gate-Drain Charge
Qgd
-
Input Capacitance
Ciss
-
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V, f = 1.0MHz
-
Output Capacitance
Coss
-
Turn-On Delay Time
td(on)
-
Rise Time
Turn-Off Delay Time
tr
VGS = 10V, VDS = 300V, ID = 15.0A,
-
td(off)
RG = 25Ω ⁽²⁾
-
Fall Time
tf
-
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
IS
-
Source-Drain Diode Forward Voltage
VSD
IS = 15.0A, VGS = 0V
-
Body Diode Reverse Recovery Time
trr
-
IF = 15.0A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤15A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=7.9mH, IAS=15.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Typ
-
-
-
-
0.34
11.5
49.0
15.0
19.1
2311
10.8
258
57
86
137
47
15
-
382
4.47
Max
Unit
-
V
5.0
1
μA
100
nA
0.40
Ω
-
S
-
-
nC
-
-
-
pF
-
-
-
ns
-
-
-
A
1.4
V
-
ns
-
μC
Jun. 2011 Version 1.1
2
MagnaChip Semiconductor Ltd.