MLX92211 Datasheet, PDF (9/13 Pages) Melexis Microelectronic Systems – 3-Wire Hall Effect Latch

9 Application Information
9.1 Typical Three-Wire Application Circuit
MLX92211-AxA
3-Wire Hall Effect Latch
MLX92211
R_PU
Notes:
1. For proper operation, a 10nF to 100nF bypass capacitor should
V_CC
C1
10nF
VDD
OUT
10k
be placed as close as possible to the V_DD and ground pin.
2. The pull-up resistor R_PU value should be chosen in to limit the
V_{OUT current through the output pin below the maximum allowed}
GND
continuous current for the device.
3. A capacitor connected to the output is not obligatory, because
the output slope is generated internally.
9.2 Automotive and Harsh, Noisy Environments Three-Wire Circuit
D1
R1
100 Ohms
V_CC
Z1
C1
10nF
MLX92211
VDD
OUT
GND
R_PU
10k
V_OUT
C2
4.7nF
Notes:
1. For proper operation, a 10nF to 100nF bypass capacitor should be placed as close as possible to the V_DD and ground pin.
2. The device could tolerate negative voltage down to -27V, so if negative transients over supply line V_PEAK< -32V are expected, usage of the
diode D1 is recommended. Otherwise only R1 is sufficient.
When selecting the resistor R1, three points are important:
- the resistor has to limit I_DD/I_DDREV to 50mA maximum
- the resistor has to withstand the power dissipated in both over voltage conditions (V_R12/R1)
- the resulting device supply voltage V_DD has to be higher than V_DD min (V_DD = V_CC – R1.I_DD)
3. The device could tolerate positive supply voltage up to +27V (until the maximum power dissipation is not exceeded), so if positive
transients over supply line with V_PEAK> 32V are expected, usage a zener diode Z1 is recommended. The R1-Z1 network should be sized to
limit the voltage over the device below the maximum allowed.
390109221101
Rev. 007
Page 9 of 13
www.melexis.com
Datasheet
Jan/15