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MLX92211 Datasheet, PDF (3/13 Pages) Melexis Microelectronic Systems – 3-Wire Hall Effect Latch
MLX92211-AxA
3-Wire Hall Effect Latch
3 Glossary of Terms
MilliTesla (mT), Gauss
RoHS
TSOT
ESD
Units of magnetic flux density: 1mT = 10 Gauss
Restriction of Hazardous Substances
Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package
code “SE”
Electro-Static Discharge
4 Absolute Maximum Ratings
Parameter
Supply Voltage (1, 2)
Supply Voltage (Load dump) (1, 3)
Supply Current (1, 2, 4)
Supply Current (1, 3, 4 )
Reverse Supply Voltage (1, 2)
Reverse Supply Voltage (Load
dump)(1, 3)
Reverse Supply Current (1, 2, 5)
Reverse Supply Current (1, 3, 5)
Output Voltage (1, 2)
Output Current (1, 2, 5)
Output Current (1, 3, 6)
Reverse Output Voltage (1)
Reverse Output Current (1, 2)
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature (7)
ESD Sensitivity – HBM (8)
ESD Sensitivity – MM (9)
ESD Sensitivity – CDM (10)
Symbol
VDD
VDD
IDD
IDD
VDDREV
VDDREV
IDDREV
IDDREV
VOUT
IOUT
IOUT
VOUTREV
IOUTREV
TA
TS
TJ
-
-
-
Value
+27
+32
+20
+50
-24
Units
V
V
mA
mA
V
-30
V
-20
mA
-50
mA
+27
V
+20
mA
+75
mA
-0.5
V
-50
mA
-40 to +150 C
-55 to +165 C
+165
C
4000
V
500
V
1000
V
Magnetic Flux Density
B
Unlimited mT
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability.
1 The maximum junction temperature should not be exceeded
2 For maximum 1 hour
3 For maximum 0.5 s
4 Including current through protection device
5 Through protection device
6 For VOUT≤27V.
7 For 1000 hours.
8 Human Model according AEC-Q100-002 standard
9 Machine Model according AEC-Q100-003 standard
10 Charged Device Model according AEC-Q100-011 standard
390109221101
Rev. 007
Page 3 of 13
www.melexis.com
Datasheet
Jan/15