2N5401 Datasheet, PDF (4/5 Pages) NXP Semiconductors – PNP high-voltage transistor

2N5401
1.0
0.9 ^{TJ = 25°C}
0.8
0.7
0.6 ^{VBE(sat) @ IC/IB = 10}
0.5
0.4
0.3
0.2
VCE(sat) @ IC/IB = 10
0.1
0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
MCC
TM
Micro Commercial Components
2.5
2.0
TJ = -55°C to 135°C
1.5
1.0
0.5
θ_VC for VCE(sat)
0
-0.5
-1.0
-1.5
-2.0
θ_VB for VBE(sat)
-2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
10.2 V
Vin
VBB
+ā8.8 V
100
10 µs
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
0.25 µF _RB
5.1 k
Vin
100
VCC
-30 V
3.0 k RC
Vout
1N914
Values Shown are for IC @ 10 mA
Figure 6. Switching Time Test Circuit
1000
700 IC/IB = 10
500 TJ = 25°C
300
200
tr @ VCC = 120 V
tr @ VCC = 30 V
100
70
50
30
20
10
0.2 0.3 0.5
td @ VBE(off) = 1.0 V
VCC = 120 V
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn–On Time
100 200
100
70
TJ = 25°C
50
30
20
Cibo
10
7.0
5.0
Cobo
3.0
2.0
1.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
2000
1000
700
IC/IB = 10
TJ = 25°C
500
300
tf @ VCC = 30 V
tf @ VCC = 120 V
200
ts @ VCC = 120 V
100
70
50
30
20
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
100 200
Figure 9. Turn–Off Time
Revision: B
www.mccsemi.com
4 of 5
2011/07/11