2N5401 Datasheet, PDF (2/5 Pages) NXP Semiconductors – PNP high-voltage transistor

2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MCC
TM
Micro Commercial Components
Symbol
Min
V(BR)CEO
150
V(BR)CBO
160
V(BR)EBO 5.0
ICBO
—
—
IEBO
—
Max
Unit
Vdc
—
Vdc
—
—
Vdc
50
50
50
nAdc
hFE
50
60
50
VCE(sat)
—
—
VBE(sat)
—
—
fT
100
Cobo
—
hfe
40
NF
—
—
—
240
—
Vdc
0.2
0.5
Vdc
1.0
1.0
MHz
300
6.0
pF
—
200
8.0
dB
Revision: B
www.mccsemi.com
2 of 5
2011/07/11