2N5401 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP high-voltage transistor

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TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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• _{Through Hole Package}
• ₁₅₀^o_{C Junction Temperature}
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
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• _{Case: TO-92, Molded Plastic}
• _{Marking: 2N5401}
2N5401
PNP Silicon
Amplifier Transistor
625mW
TO-92
A
E
B
0D[LPXP 5DWLQJV # ⁴& 8QOHVV 2WKHUZLVH 6SHFLILHG
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
: ^{Power Dissipation@TA=25oC}
Derate above 25
: ^{Power Dissipation@TC=25oC}
Derate above 25
Maximum Thermal Resistance,
Junction to Ambient Air
Maximum Thermal Resistance,
Junction to Case
Operating & Storage Temperature
Symbol Value Unit
V_CEO
V_CBO
V_EBO
I_C
P_d
150 V
160 V
5.0 V
600 mA
625 ^mW
5.0 _mW/^o_C
P_d
1.5 ^W
12 _mW/^o_C
R_,-$ 200 ^o_C/W
R_,-& 83.3 ^o_C/W
T_j, T_STG -55~150 ^o_C
C
D
EBC
G
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
Revision: B
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1 of 5
2011/07/11