2N5401 Datasheet, PDF (3/5 Pages) NXP Semiconductors – PNP high-voltage transistor

2N5401
MCC
TM
Micro Commercial Components
200
150
TJ = 125°C
100
25°C
70
50
-ā55°C
30
VCE = -1.0 V
VCE = -5.0 V
20
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
IC, COLLECTOR CURRENT (mA)
20 30
50
100
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
IC = 1.0 mA
10 mA
30 mA
100 mA
0.4
0.3
0.2
0.1
0
0.005 0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
103
102 ^{VCE = 30 V}
101
TJ = 125°C
100
75°C
10-1
REVERSE
10-2
25°C
IC = ICES
FORWARD
10-3
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut–Off Region
Revision: B
www.mccsemi.com
3 of 5
2011/07/11