33C408 Datasheet, PDF (5/12 Pages) Maxwell Technologies – 4 Megabit (512K x 8-Bit) CMOS SRAM

4 Megabit (512K x 8-Bit) CMOS SRAM
33C408
PARAMETER
TABLE 7. 33C408 AC CHARACTERISTICS FOR READ CYCLE
(V_CC = 5V + 10%, T_A = -55 TO +125 ^°C, UNLESS OTHERWISE SPECIFIED)
SYMBOL
SUBGROUPS
MIN
TYP
MAX
UNIT
Chip Select to Power Up Time
-20
-25
-30
t_PU
9, 10, 11
ns
--
0
--
--
0
--
--
0
--
Chip Select to Power Down Time
-20
-25
-30
t_PD
9, 10, 11
ns
--
10
--
--
15
--
--
20
--
CS
H
L
L
L
1. X = don’t care.
TABLE 8. 33C408 FUNCTIONAL DESCRIPTION
WE
OE
MODE
I/O PIN
X¹
X¹
Not Select
High-Z
H
H
Output Disable
High-Z
H
L
Read
D_OUT
L
X¹
Write
D_IN
Subgroups
PARAMETER
TABLE 9. 33C408 AC CHARACTERISTICS FOR WRITE CYCLE
(V_CC = 5V + 10%, T_A = -55 TO +125 ^°C, UNLESS OTHERWISE SPECIFIED)
SUBGROUPS
SYMBOL
MIN
TYP
Write Cycle Time
-20
-25
-30
9, 10, 11
t_WC
20
--
25
--
30
--
Chip Select to End of Write
-20
-25
-30
9, 10, 11
t_CW
14
--
15
--
17
--
Address Setup Time
-20
-25
-30
9, 10, 11
t_AS
0
--
0
--
0
--
Address Valid to End of Write
-20
-25
-30
9, 10, 11
t_AW
14
--
15
--
17
--
SUPPLY CURRENT
I_SB, I_SB1
I_CC
I_CC
I_CC
MAX
UNIT
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
04.16.02 REV 8
All data sheets are subject to change without notice 5
©2002 Maxwell Technologies
All rights reserved.