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33C408 Datasheet, PDF (4/12 Pages) Maxwell Technologies – 4 Megabit (512K x 8-Bit) CMOS SRAM
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4 Megabit (512K x 8-Bit) CMOS SRAM
33C408
PARAMETER
TABLE 6. 33C408 AC TEST CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 + 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE NOTED)
MIN
TYP
MAX
Input Rise/Fall Time
--
--
3.0
Input Timing Measurement Reference Level
--
--
1.5
UNITS
ns
V
PARAMETER
TABLE 7. 33C408 AC CHARACTERISTICS FOR READ CYCLE
(VCC = 5V + 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED)
SYMBOL
SUBGROUPS
MIN
TYP
MAX
UNIT
Read Cycle Time
-20
-25
-30
tRC
9, 10, 11
ns
20
--
--
25
--
--
30
--
--
Address Access Time
-20
-25
-30
tAA
9, 10, 11
ns
--
--
20
--
--
25
--
--
30
Chip Select Access Time
-20
-25
-30
tCO
9, 10, 11
ns
--
--
20
--
--
25
--
--
30
Output Enable to Output Valid
-20
-25
-30
tOE
9, 10, 11
--
--
10
ns
--
--
12
--
--
14
Chip Enable to Output in Low-Z
-20
-25
-30
tLZ
9, 10, 11
ns
--
3
--
--
3
--
--
3
--
Output Enable to Output in Low-Z
-20
-25
-30
tOLZ
9, 10, 11
ns
--
0
--
--
0
--
--
0
--
Chip Deselect to Output in High-Z
-20
-25
-30
tHZ
9, 10, 11
ns
--
5
--
--
6
--
--
8
--
Output Disable to Output in High-Z
-20
-25
-30
Output Hold from Address Change
-20
-25
-30
tOHZ
9, 10, 11
ns
--
5
--
--
6
--
--
8
--
tOH
9, 10, 11
ns
3
--
--
5
--
--
6
--
--
04.16.02 REV 8
All data sheets are subject to change without notice 4
©2002 Maxwell Technologies
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