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DS4510 Datasheet, PDF (6/12 Pages) Maxim Integrated Products – CPU Supervisor with Nonvolatile Memory and Programmable I/O
CPU Supervisor with Nonvolatile Memory and
Programmable I/O
Functional Diagram
SDA
SCL
2-WIRE
INTERFACE
A0
VCC
VCC
GND
EEPROM
64 BYTES
USER
MEMORY
VCC
DS4510
INTERNAL
VOLTAGE
REFERENCE
PROGRAMMABLE
RESET
TIMER
4x
4 BIDIRECTIONAL
NONVOLATILE I/O LATCHES
PULLUP ENABLE (F0h)
I/OX CONTROL (F4h-F7h)
I/O STATUS (F8h)
VCC
RP
RST
4 NV
I/O PINS
Detailed Description
The DS4510 contains a CPU supervisor, four program-
mable I/O pins, and a 64-byte EEPROM memory. All
functions are configurable or controllable through an
industry-standard I2C-compatible bus. DS4510 NV reg-
isters that are likely to require frequent modification are
implemented using SRAM-shadowed EEPROM (SEEP-
ROM) memory. This memory is configurable to act as
volatile SRAM or NV EEPROM by adjusting the SEE bit
in the Config register. Configuring the SEEPROM as
SRAM eliminates the EEPROM write time and allows
infinite write cycles to these registers. Configuring the
registers as EEPROM allows the application to change
the power-on values that are recalled during power-up.
Programmable CPU Supervisor
The timeout period is adjusted by writing the reset
delay register (SEEPROM). The delay for each setting
is shown in the CPU Supervisor AC Electrical
Characteristics. If the SEE bit is set, changes are writ-
ten to SRAM. On power-up the last value written to the
EEPROM is recalled. The I2C bus is also used to acti-
vate the RST by setting the SWRST bit in the Config
register. This bit automatically returns to zero after the
timeout period. The Config register also contains the
ready, trip point, and reset status bits. The ready bit
determines if the power-on reset level of the DS4510 is
surpassed by VCC. The trip point bit determines if VCC
is above VCCTP, and the reset status bit is set if RST is
in its active state.
Note: The RST pin is an open-drain output, therefore an
external pullup resistor must be used to realize high
logic levels.
Programmable NV Digital I/O Pins
Each programmable I/OX pin contains an input, open-
collector output, and a selectable internal pullup resis-
tor. The DS4510 stores changes to the I/OX pin in
SEEPROM memory. Using the SEEPROM as SRAM is
conducive to applications such as I/O expansion that
generally require fast access times and frequent modi-
fication of the I/OX pin. Configuring the SEEPROM to
behave as EEPROM allows the modification of the
power-on state of the I/OX pin. During power-up the
I/OX pins are high impedance until VCC exceeds 2.0V
(typically), which is when the last value programmed is
recalled from EEPROM. On power-down, the I/OX state
is maintained until VCC drops below 1.9V (typically).
The internal pullups for each I/OX pin are controlled by
the pullup-enable register (F0h). Similarly, the individual
I/OX control registers (F4h to F7h) adjust the pulldown
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