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MAX1549ETL Datasheet, PDF (23/35 Pages) Maxim Integrated Products – Dual, Interleaved, Fixed-Frequency Step-Down Controller with a Dynamically Adjustable Output
Dual, Interleaved, Fixed-Frequency Step-Down
Controller with a Dynamically Adjustable Output
Alternately, the secondary output voltage (OUT2) can
be adjusted from 0.5V to 2.7V using a resistive voltage-
divider. The MAX1549 regulates FB2 to a fixed 0.5V ref-
erence voltage, so the secondary output voltage can
be determined with the following equation:
VOUT2
=
⎛
VFB2 ⎝⎜1 +
RA
RB
⎞
⎠⎟
where VFB2 = 0.5V, RA is the resistor from the output to
FB2, and RB is the resistor from FB2 to analog ground.
Current-Limit Protection (ILIM_)
The current-limit circuit uses differential current-sense
inputs (CSH_ and CSL_) to limit the peak inductor cur-
rent. If the magnitude of the current-sense signal
exceeds the current-limit threshold, the PWM controller
turns off the high-side MOSFET (Figure 3). At the next
rising edge of the internal oscillator, the PWM controller
does not initiate a new cycle unless the current-sense
signal drops below the peak current-limit threshold. The
actual maximum load current is less than the peak cur-
rent-limit threshold by an amount equal to 1/2 the
inductor ripple current. Therefore, the maximum load
capability is a function of the current-limit threshold,
current-sense resistance, inductor value, switching fre-
quency, and duty cycle (VOUT / VIN).
Connect ILIM_ to VCC for the 70mV default threshold, or
adjust the current-limit threshold with an external resistor-
divider at ILIM_. Use a 2µA to 20µA divider current for
accuracy and noise immunity. The current-limit threshold
adjustment range is from 50mV to 200mV. In the
adjustable mode, the current-limit threshold voltage
equals precisely 1/10th the voltage seen at ILIM_ (VLIMIT
= 0.1VILIM_). The logic threshold for switchover to the
70mV default value is approximately VCC - 1V.
Carefully observe the PC board layout guidelines to
ensure noise and DC errors do not corrupt the differen-
tial current-sense signals seen by CSH_ and CSL_.
Place the IC close to the sense resistor with short,
direct traces, making a Kelvin-sense connection to the
current-sense resistor.
MOSFET Gate Drivers (DH_, DL_)
The DH_ and DL_ drivers are optimized for driving mod-
erately sized, high-side and larger, low-side power
MOSFETs. This is consistent with the low duty factor seen
in notebook applications, where a large VIN - VOUT differ-
ential exists. An adaptive dead-time circuit monitors the
DL_ output and prevents the high-side MOSFET from
turning on until DL_ is fully off. A similar adaptive dead-
time circuit monitors the DH_ output to prevent the low-
side MOSFET from turning on until DH_ is fully off. There
must be a low-resistance, low-inductance path from the
DL_ and DH_ drivers to the MOSFET gates for the adap-
tive dead-time circuits to work properly. Otherwise, the
MAX1549 interprets the MOSFET gates as “off” while
charge actually remains on the gate. Use very short, wide
traces (50 mils to 100 mils wide if the MOSFET is 1in from
the driver).
The internal pulldown transistor that drives DL_ low is
robust, with a 0.5Ω (typ) on-resistance. This helps prevent
DL_ from being pulled up due to capacitive coupling from
the drain to the gate of the low-side MOSFETs when the
inductor node (LX_) quickly switches from ground to VIN.
Applications with high input voltages and long, inductive
driver traces may require additional gate-to-source
capacitance to ensure fast-rising LX_ edges do not pull
up the low-side MOSFETs’ gate voltage, causing shoot-
through currents. The capacitive coupling between LX_
and DL_ created by the MOSFETs’ gate-to-drain capaci-
tance (CRSS), gate-to-source capacitance (CISS - CRSS),
and additional board parasitics should not exceed the fol-
lowing minimum threshold:
VGS(TH)
>
VIN
⎛ CRSS ⎞
⎝⎜ CISS ⎠⎟
Lot-to-lot variation of the threshold voltage can cause
problems in marginal designs. Typically, adding a
4700pF between DL_ and power ground (CNL in Figure
6), close to the low-side MOSFETs, greatly reduces the
voltage coupling. Do not exceed 22nF of total gate
capacitance to prevent excessive turn-off delays.
Alternately, shoot-through currents can be caused by a
combination of fast high-side MOSFETs and slow low-
side MOSFETs. If the turn-off delay time of the low-side
MOSFET is too long, the high-side MOSFETs turn on
before the low-side MOSFETs have actually turned off.
Adding a resistor less than 10Ω in series with BST_
slows down the high-side MOSFET turn-on time, elimi-
nating the shoot-through currents without degrading
the turn-off time (Figure 6). Slowing down the high-side
MOSFET also reduces the LX_ node rise time, thereby
reducing the EMI and high-frequency coupling respon-
sible for switching noise.
Power-Up Sequence
Power-on reset (POR) occurs when VCC rises above
approximately 2V, resetting the fault latch and soft-start
counter, powering up the reference, and preparing the
PWM controllers for operation. Until VCC reaches 4.25V
(typ), the VCC undervoltage-lockout (UVLO) circuitry
inhibits switching. The controller inhibits switching by
pulling DH_ low and forcing DL_ high. When VCC rises
above 4.25V and ON_ is driven high, the activated con-
troller initializes soft-start and starts switching.
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