MAX1586A_08 Datasheet, PDF (2/30 Pages) Maxim Integrated Products – High-Efficiency, Low-IQ PMICs with Dynamic Core for PDAs and Smart Phones

High-Efficiency, Low-I_Q PMICs with
Dynamic Core for PDAs and Smart Phones
ABSOLUTE MAXIMUM RATINGS
IN, IN45, IN6, MR, LBO, DBO, RSO, POK, SCL, SDA,
BKBT, V7, SLP, SRAD, PWM3 to GND...............-0.3V to +6V
REF, CC_, ON_, FB_, DBI, LBI, V1, V2, RAMP, BYP,
MR to GND ...........................................-0.3V to (V_IN + 0.3V)
PV1, PV2, PV3, SLPIN to IN...................................-0.3V to +0.3V
V4, V5 to GND ..........................................-0.3V to (V_IN45 + 0.3V)
V6 to GND ..................................................-0.3V to (V_IN6 + 0.3V)
PV1 to PG1 ............................................................-0.3V to +6.0V
PV2 to PG2 ............................................................-0.3V to +6.0V
PV3 to PG3 ............................................................-0.3V to +6.0V
LX1 Continuous Current....................................-1.30A to +1.30A
LX2 Continuous Current........................................-0.9A to +0.9A
LX3 Continuous Current........................................-0.9A to +0.9A
PG1, PG2, PG3 to GND.........................................-0.3V to +0.3V
V1, V2, V4, V5, V6 Output Short-Circuit Duration.......Continuous
Continuous Power Dissipation (T_A = +70°C)
6mm x 6mm 40-Pin Thin QFN
(derate 26.3mW/°C above +70°C) ...........................2105mW
7mm x 7mm 48-Pin Thin QFN
(derate 26.3mW/°C above +70°C) ...........................2105mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V_IN = 3.6V, V_BKBT = 3.0V, V_LBI = 1.1V, V_DBI = 1.35V, circuit of Figure 5, T_A = 0°C to +85°C, unless otherwise noted. Typical values
are at T_A = +25°C.)
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
PV1, PV2, PV3, SLPIN, IN Supply
Voltage Range
PV1, PV2, PV3, IN, and SLPIN must connect together
externally
2.6
5.5
V
IN45, IN6 Supply Voltage Range
2.4
5.5
V
IN Undervoltage-Lockout (UVLO)
Threshold
V_IN rising
V_IN falling
2.25 2.40 2.55
V
2.200 2.35 2.525
Only V7 on, V_IN below ^MAX1586
32
DBI threshold V_IN = 3.0V _MAX1587
5
Quiescent Current
No load (I_PV1 +
REG1 and REG2 on in ^MAX1586
130
I_PV2 + I_PV3 + I_IN + ^{switch mode, REG3 off MAX1587}
130
I_SLPIN + I_IN45 +
REG1 and REG2 on in ^MAX1586
60
µA
I_IN6)
sleep mode, REG3 off _MAX1587
60
All REGs on
MAX1586
225
MAX1587
200
BKBT Input Current
ON1 = 0
ON1 = IN
4
µA
0.8
REF Output Voltage
0 to 10µA load
1.2375 1.25 1.2625 V
SYNCHRONOUS-BUCK PWM REG1
REG1 Voltage Accuracy
FB1 = GND, 3.6V ≤ V_PV1 ≤ 5.5V, load = 0 to 1300mA
3.25 3.3 3.35
V
FB1 Voltage Accuracy
FB1 used with external resistors, 3.6V ≤ V_PV1 ≤ 5.5V,
load = 0 to 1300mA
1.231 1.25 1.269 V
FB1 Input Current
FB1 used with external resistors
100
nA
Error-Amplifier Transconductance Referred to FB
87
µS
Dropout Voltage (Note 1)
Load = 800mA
Load = 1300mA
180 280
mV
293 450
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