DS1315 Datasheet, PDF (11/21 Pages) Dallas Semiconductor – Phantom Time Chip

DS1315 Phantom Time Chip
PARAMETER
Write Cycle
CEI Pulse Width
OE Pulse Width
Write Recovery
Data Setup
Data Hold Time
RST Pulse Width
SYMBOL
t_WC
t_CW
t_OW
t_WR
t_DS
t_DH
t_RST
MIN
65
55
55
10
30
0
65
TYP
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
NOTES
4
5
5
DC OPERATING ELECTRICAL CHARACTERISTICS
(V_CC = 3.3V ±10%, T_A = Over the operating range.)
PARAMETER
SYMBOL MIN TYP
Average V_CC Power-Supply
Current
I_CC1
Average V_CC Power-Supply
Current,
(V_CCO = V_CCI - 0.3)
I_CC01
TTL Standby Current
( CEI = V_IH)
I_CC2
CMOS Standby Current
( CEI = V_CCI - 0.2)
I_CC3
Input Leakage Current
(any input)
I_IL
-1
Output Leakage Current
(any input)
I_LO
-1
Output Logic 1 Voltage
(I_OUT = 0.4 mA)
V_OH
2.4
Output Logic 0 Voltage
(I_OUT = 1.6 mA)
V_OL
Power-Fail Trip Point
V_PF
2.8
V_BAT1,
Battery Switch Voltage
V_SW
V_BAT2,
or V_PF
MAX
3
100
2
1.1
+1
+1
0.4
2.97
DC POWER-DOWN ELECTRICAL CHARACTERISTICS
(V_CC < 2.97V, T_A = Over the operating range.)
PARAMETER
SYMBOL MIN TYP MAX
V_CCI
CEO Output Voltage
V_CEO
or
V_BAT1,2
- 0.2
V_BAT1 OR V_BAT2 Battery Current
I_BAT
0.5
Battery Backup Current
at V_CCO = V_BAT - 0.2
I_CCO2
10
UNITS
mA
mA
mA
mA
µA
µA
V
V
V
UNITS
V
µA
µA
NOTES
6
7
6
6
2
2
14
NOTES
8
6
9
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