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DS1315 Datasheet, PDF (10/21 Pages) Dallas Semiconductor – Phantom Time Chip
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DS1315 Phantom Time Chip
DC POWER-DOWN ELECTRICAL CHARACTERISTICS
(VCC < 4.5V, TA = Over the operating range.)
PARAMETER
SYMBOL MIN
TYP
MAX
VCCI - 0.2
CEO Output Voltage
VCEO
or
VBAT1,2 -
0.2
VBAT1 or VBAT2 Battery
Current
IBAT
0.5
Battery Backup Current
@ VCCO = VBAT-0.2V
ICCO2
10
UNITS NOTES
V
8
µA
6
µA
9
AC ELECTRICAL OPERATING CHARACTERISTICS—ROM/RAM = GND
(VCC = 5.0V ±10%, TA = Over the operating range.)
PARAMETER
SYMBOL MIN
TYP
MAX UNITS NOTES
Read Cycle Time
tRC
65
ns
CEI Access Time
tCO
55
ns
OE Access Time
tOE
55
ns
CEI to Output Low-Z
tCOE
5
ns
OE to Output Low-Z
tOEE
5
ns
CEI to Output High-Z
tOD
25
ns
OE to Output High-Z
tODO
25
ns
Read Recovery
tRR
10
ns
Write Cycle
tWC
65
ns
Write Pulse Width
tWP
55
ns
Write Recovery
tWR
10
ns
4
Data Setup
tDS
30
ns
5
Data Hold Time
tDH
0
ns
5
CEI Pulse Width
tCW
55
ns
OE Pulse Width
tOW
55
ns
RST Pulse Width
tRST
65
ns
AC ELECTRICAL OPERATING CHARACTERISTICS—ROM/RAM = VCCO
(VCC = 5.0V ±10%, TA = Over the operating range.)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
Read Cycle Time
tRC
65
ns
CEI Access Time
tCO
55
ns
OE Access Time
tOE
55
ns
CEI to Output Low Z
tCOE
5
ns
OE to Output Low Z
tOEE
5
ns
CEI to Output High Z
tOD
25
ns
OE to Output High Z
tODO
25
ns
Address Setup Time
tAS
5
ns
Address Hold Time
tAH
5
ns
Read Recovery
tRR
10
ns
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