MRF275G Datasheet, PDF (7/16 Pages) Motorola, Inc – 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

A
B
C14 L5 C15
L6
BIAS
C10
C11
R1
C12
R2 ^C13
C18
28 V
C1
L1
D.U.T.
Z1
L3
Z3
C8
Z5
B1
C3
C4
C5
C6
C7
B2
C2
L2
Z2
R3
A
C16
Z4
L4
B
C17
Z6
C9
0.180″
B1
B2
C1, C2, C8, C9
C3, C5, C7
C4
C6
C10, C12, C13,
C16, C17
C11
C14, C15
C18
Balun, 50 Ω, 0.086″ O.D. 2″ Long,
Semi Rigid Coax
Balun, 50 Ω, 0.141″ O.D. 2″ Long,
Semi Rigid Coax
270 pF, ATC Chip Capacitor
1.0 – 20 pF, Trimmer Capacitor
15 pF, ATC Chip Capacitor
33 pF, ATC Chip Capacitor
0.01 µF, Ceramic Capacitor
1.0 µF, 50 V, Tantalum
680 pF, Feedthru Capacitor
20 µF, 50 V, Tantalum
L1, L2
L3, L4
L5
L6
R1
R2, R3
Z1, Z2
Z3, Z4
Z5, Z6
#18 Wire, Hairpin Inductor
0.200″
12 Turns #18, 0.340″ I.D.,
Enameled Wire
Ferroxcube VK200 20/4B
3 Turns #16, 0.340″ I.D.,
Enameled Wire
1.0 kΩ, 1/4 W Resistor
10 kΩ, 1/4 W Resistor
0.400″ x 0.250″, Microstrip Line
0.870″ x 0.250″, Microstrip Line
0.500″ x 0.250″, Microstrip Line
Board material
0.060″ Teflon–fiberglass,
ε_r = 2.55, copper clad both sides, 2 oz. copper.
Figure 12. 400 MHz Test Circuit
REV 1
7