MRF275G Datasheet, PDF (2/16 Pages) Motorola, Inc – 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
Drain–Source On–Voltage (VGS = 10 V, ID = 5 A)
VDS(on)
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
gfs
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
FUNCTIONAL CHARACTERISTICS (2) (Figure 1)
Common Source Power Gain
Gps
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)
Drain Efficiency
η
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)
Electrical Ruggedness
ψ
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA,
VSWR 30:1 at all Phase Angles)
1. Each side of device measured separately.
2. Measured in push–pull configuration.
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
1
mA
—
—
1
µA
1.5
2.5
4.5
Vdc
0.5
0.9
1.5
Vdc
3
3.75
—
mhos
—
135
—
pF
—
140
—
pF
—
17
—
pF
10
11.2
—
dB
50
55
—
%
No Degradation in Output Power
REV 1
2