MRF275G Datasheet, PDF (4/16 Pages) Motorola, Inc – 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

TYPICAL CHARACTERISTICS
300
250
225 MHz
400 MHz _{500 MHz}
200
150
100
50
IDQ = 2 x 100 mA
VDD = 28 V
0
0
5
10
15
20
25
Pin, INPUT POWER (Watts)
Figure 2. Output Power versus Input Power
160
140
120
100
80
60
40
20
0
–10
VDS = 28 V
IDQ = 2 x 100 mA
Pin = Constant
f = 500 MHz
–8
–6
–4
–2
0
2
4
VGS, GATE–SOURCE VOLTAGE (V)
Figure 3. Output Power versus Gate Voltage
10
9 ^{VDS = 10 V}
VGS(th) = 2.5 V
8
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VGS, GATE–SOURCE VOLTAGE (V)
Figure 4. Drain Current versus Gate Voltage
(Transfer Characteristics)
200
180
Pin = 14 W
160
140
10 W
120
100
6W
80
60
40
IDQ = 2 x 100 mA
20
f = 400 MHz
0
12 14 16 18 20 22 24 26 28
VDD, SUPPLY VOLTAGE (V)
Figure 6. Output Power versus Supply Voltage
REV 1
4
180
160
Pin = 14 W
140
10 W
120
100
6W
80
60
40
IDQ = 2 x 100 mA
20
f = 500 MHz
0
12 14 16 18 20 22 24 26 28
VDD, SUPPLY VOLTAGE (V)
Figure 5. Output Power versus Supply Voltage
250
12 W
200
10 W
150
Pin = 4 W
100
50
IDQ = 2 x 100 mA
f = 225 MHz
0
12 14 16 18 20 22 24 26 28
VDD, SUPPLY VOLTAGE (V)
Figure 7. Output Power versus Supply Voltage