MRF175GU1111 Datasheet, PDF (5/10 Pages) Tyco Electronics – N-CHANNEL MOS BROADBAND RF POWER FETs

TYPICAL CHARACTERISTICS
500
30
200
C_iss
25
100
C_oss
20
P_out = 200 W
50
V_GS = 0 V
f = 1 MHz
15
150 W
20
V_DS = 50 V
10
C_rss
10
I_DQ = 2 x 100 mA
50
10
20
30
40
50
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Drain–Source Voltage*
* Data shown applies to each half of MRF176GU/GV
55
10
20
50
100
200
500
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency
MRF176GV
300
V_DD = 50 V
200
40 V
100
I_DQ = 2 x 100 mA
f = 225 MHz
00
6
12
P_in, POWER INPUT (WATTS)
Figure 8. Power Input versus Power Output
320
280 ^{IDQ = 2 x 100 mA}
f = 225 MHz
240
200
160
P_in = 6 W
4W
120
2W
80
40
0
30 32 34 36 38 40 42 44 46 48 50
V_DS, SUPPLY VOLTAGE (VOLTS)
Figure 9. Output Power versus Supply Voltage
REV 9
5