MRF175GU1111 Datasheet, PDF (4/10 Pages) Tyco Electronics – N-CHANNEL MOS BROADBAND RF POWER FETs

TYPICAL CHARACTERISTICS
4000
100
V_DS = 30 V
3000
15 V
2000
10
1000
00
1
2
345
67
8 9 10
1
2
I_D, DRAIN CURRENT (AMPS)
Figure 3. Common Source Unity Current Gain*
Gain–Frequency versus Drain Current
* Data shown applies to each half of MRF176GU/GV
T_C = 25°C
10
50
200
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
REV 9
4
INPUT AND OUTPUT IMPEDANCE
MRF176GU/GV
V_DD = 50 V, I_DQ = 2 x 100 mA
150
100
Z_in
300
400
225
f = 500 MHz
f = 500 MHz
400
Z_OL*
225 ³⁰⁰
225
50
30
Z_o = 10 Ω
150 _ZOL*
100
50
30
f
Z_in
MHz
OHMS
Z_OL*
OHMS
(P_out = 150 W)
225 2.05 - j2.50 6.50 - j3.50
300 2.00 - j1.10 4.80 - j3.10
400 1.85 + j0.75 3.00 - j1.90
500 1.60 + j2.70 2.60 + j0.10
(P_out = 200 W)
30 7.50 - j6.50 17.00 - j4.00
50 5.50 - j7.00 14.00 - j5.00
100 3.20 - j6.00 11.00 - j5.20
150 2.50 - j4.80 ă8.20 - j5.00
225 2.05 - j2.50 ă5.00 - j4.20
Z_OL* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage
and frequency.
NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.
Figure 5. Series Equivalent Input/Output Impedance