|
MRF175GU1111 Datasheet, PDF (1/10 Pages) Tyco Electronics – N-CHANNEL MOS BROADBAND RF POWER FETs | |||
|
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF176GU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
NâChannel EnhancementâMode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
⢠Electrical Performance
MRF176GU @ 50 V, 400 MHz (âUâ Suffix)
Output Power â 150 Watts
Power Gain â 14 dB Typ
Efficiency â 50% Typ
MRF176GV @ 50 V, 225 MHz (âVâ Suffix)
Output Power â 200 Watts
Power Gain â 17 dB Typ
G
Efficiency â 55% Typ
G
⢠100% Ruggedness Tested At Rated Output Power
D
S
(FLANGE)
⢠Low Thermal Resistance
⢠Low Crss â 7.0 pF Typ @ VDS = 50 V
D
MRF176GU
MRF176GV
200/150 W, 50 V, 500 MHz
NâCHANNEL MOS
BROADBAND
RF POWER FETs
CASE 375â04, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainâSource Voltage
GateâSource Voltage
Drain Current â Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
ID
PD
125
±40
16
400
2.27
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
â65 to +150
°C
TJ
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.44
°C/W
Handling and Packaging â MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
DrainâSource Breakdown Voltage
(VGS = 0, ID = 100 mA)
V(BR)DSS
125
â
â
Vdc
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
GateâBody Leakage Current
(VGS = 20 V, VDS = 0)
NOTE:
1. Each side of device measured separately.
IDSS
â
â
2.5
mAdc
IGSS
â
â
1.0
µAdc
REV 9
1
|
▷ |