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MRF175GU1111 Datasheet, PDF (2/10 Pages) Tyco Electronics – N-CHANNEL MOS BROADBAND RF POWER FETs
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
VGS(th)
1.0
3.0
6.0
Vdc
VDS(on)
1.0
3.0
5.0
Vdc
gfs
2.0
3.0
—
mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
—
180
—
pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
—
100
—
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
—
6.0
—
pF
FUNCTIONAL CHARACTERISTICS — MRF176GV (2) (Figure 1)
Common Source Power Gain
Gps
(VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
15
17
—
dB
Drain Efficiency
η
(VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
Electrical Ruggedness
ψ
(VDD = 50 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
50
55
—
%
No Degradation in Output Power
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
R1
BIAS 0-ā 6ā V
C3
C4
C8
C9
+
C10
50 V
-
R2
T1
D.U.T.
T2
C5
C1 C2
C6
C7
C1 — Arco 404, 8.0ā–ā60 pF
C2, C3, C6, C8 — 1000 pF Chip
C4, C9 — 0.1 µF Chip
C5 — 180 pF Chip
C7 — Arco 403, 3.0ā–ā35 pF
C10 — 0.47 µF Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enameled Wire,
L1 — Close Wound, 1/4″ I.D.
Board material — .062″ fiberglass (G10),
Two sided, 1 oz. copper, εr ^ 5
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent
L2 — Ferrite Beads of Suitable Material
L2 — for 1.5ā–ā2.0 µH, Total Inductance
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhms, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 — Can Be Made of 25 Ohm Semirigid
T1 — Co–Ax, 47ā–ā62 Mils O.D.
T2 — 1:4 Impedance Ratio RF Transformer.
T2 — Can Be Made of 25 Ohm Semirigid
T2 — Co–Ax, 62ā–ā90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
Figure 1. 225 MHz Test Circuit
REV 9
2
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