MRF136Y Datasheet, PDF (5/9 Pages) Tyco Electronics – N-CHANNEL MOS BROADBAND RF POWER FET

100
10
180
60
C_oss
40
C_iss
20
C_rss
V_GS = 0 V
f = 1 MHz
5
3
2
T_C = 25°C
1
0.3
0.2
0
0.1
0
4
8
12
16
20
24
28
1
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 10. Capacitance versus Drain–Source Voltage
23 5
10
20 30 50 70 100
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 11. DC Safe Operating Area
TYPICAL PERFORMANCE IN BROADBAND TEST CIRCUIT
(Refer to Figure 1)
40
16
35
14
30
12
25
f = 150 MHz
20
15
10
5
30 MHz
V_DD = 28 V
I_DQ = 100 mA
10
8
6
V_DD = 28 V
I_DQ = 100 mA
4
P_out = 30 W
2
0
0
0.5
1
1.5
2
2.5
P_in, INPUT POWER (WATTS)
Figure 12. Output Power versus Input Power
0
0
20
40
60
80 100 120 140 160
f, FREQUENCY (MHz)
Figure 13. Power Gain versus Frequency
100
90
V_DD = 28 V
80
I_DQ = 100 mA
P_out = 30 W
70
60
50
40
30
20
10
00
20 40 60 80 100 120 140 160
f, FREQUENCY (MHz)
Figure 14. Drain Efficiency versus Frequency
30
V_DD = 28 V
25 ^IDQ ^{= 100 mA}
P_in = CONSTANT
20 TYPICAL DEVICE
SHOWN, V_GS(th) = 3 V
15
f = 150 MHz
30 MHz
10
5
0
-ā6
-ā4
-ā2
0
2
4
6
V_GS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 15. Output Power versus Gate Voltage
REV 0
5