MRF136Y Datasheet, PDF (4/9 Pages) Tyco Electronics – N-CHANNEL MOS BROADBAND RF POWER FET

20
18
16
f = 400 MHz
I_DQ = 25 mA
14
V_DD = 28 V
12
10
8
V_DD = 13.5 V
6
4
2
0
0
1
2
3
4
P_in, INPUT POWER (WATTS)
Figure 4. Output Power versus Input Power
24
21
P_in = 600 mW
18
15
400 mW
12
200 mW
9
6
I_DQ = 25 mA
3
f = 100 MHz
0
12
14
16
18
20
22
24
26
28
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
24
P_in = 900 mW
21
18
600 mW
15
12
300 mW
9
6
I_DQ = 25 mA
3
f = 150 MHz
0
12
14 16 18
20 22
24 26 28
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
24
21
P_in = 1 W
18
15
0.7 W
12
9
0.4 W
6
I_DQ = 25 mA
3
f = 200 MHz
0
12
14 16
18 20
22 24
26 28
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 7. Output Power versus Supply Voltage
2
1.8
1.6
TYPICAL DEVICE
SHOWN, V_GS(th) = 3 V
1.4
1.2
1
V_DS = 10 V
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
V_DS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain Current versus Gate Voltage
(Transfer Characteristics)*
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94-ā25
V_DS = 28 V
I_D = 750 mA
500 mA
250 mA
25 mA
0
25 50
75 100 125 150 175
T_C, CASE TEMPERATURE (°C)
Figure 9. Gate–Source Voltage versus
Case Temperature*
REV 0
4