MRF136Y Datasheet, PDF (3/9 Pages) Tyco Electronics – N-CHANNEL MOS BROADBAND RF POWER FET

RF INPUT
R4
R6
BIAS
ADJUST
D1
C11
RFC1
C2
R2
C3
R5
R1
T1
C1
A
B
G
G
R3
D
S
D
DUT
C4
T2
C9
C5
C6
RFC2
C7
C10
C8
V_DD = +ā28 V
RF OUTPUT
C1 — 5.0 pF
C2, C3, C4, C6, C7, C9, C11 — 0.1 µF Ceramic
C5, C8 — 680 pF Feedthru
C10 — 15 pF
D1 — 1N4740 Motorola Zener
RFC1 — 17 Turns, #24 AWG Wound on R5
RFC2 — Ferroxcube VK–200–19/4B or Equivalent
R1 — 10 kΩ, 1/4 W
R2, R3 — 560 Ω, 1/2 W
R4 — 10 Turns, 10 kΩ
R5 — 56 kΩ, 1 W
R6 — 1.6 kΩ, 1/4 W
T1 — Primary Winding — 3 Turns #28 Enameled Wire.
T1 — Secondary Winding — 2 Turns #28 Enameled Wire.
T1 — Both windings wound through a Fair/Rite Balun 65 core.
T1 — Part #2865002402.
T2 — 1:1 Transformer Wound Bifilar — 2 Turns Twisted Pair
T1 — #24 Enameled Wire through a Indiana General Balun Q1
T1 — core. Part #18006–1–Q1. Primary winding center tapped.
Board Material — 0.062″ G10, 1 oz. Cu Clad, Double Sided
Figure 1. 30–150 MHz Test Circuit
20
18
f = 100 MHz
16
150 MHz
200 MHz
14
12
10
8
6
4
V_DD = 28 V
I_DQ = 25 mA
2
0
0
200
400
600
800
1000
P_in, INPUT POWER (MILLWATTS)
Figure 2. Output Power versus Input Power
10
9
f = 100 MHz
8
7
150 MHz
6
200 MHz
5
4
3
2
V_DD = 13.5 V
I_DQ = 25 mA
1
0
0
200
400
600
800
1000
P_in, INPUT POWER (MILLWATTS)
Figure 3. Output Power versus Input Power
REV 0
3