MRF136Y Datasheet, PDF (1/9 Pages) Tyco Electronics – N-CHANNEL MOS BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field-Effect Transistor
N-Channel Enhancement-Mode MOSFET
Designed for wideband large–signal amplifier and oscillator applications up to
400 MHz range, in either single ended or push–pull configuration.
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 30 Watts
Broadband Gain = 14 dB (Typ)
Efficiency = 54% (Typical)
• Small–Signal and Large–Signal
Characterization
• 100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
• Space Saving Package For
Push–Pull Circuit
Applications
• Excellent Thermal Stability,
Ideally Suited For Class A
Operation
D
G
S
G
(FLANGE)
• Facilitates Manual Gain
Control, ALC and
D
Modulation Techniques
Order this document
by MRF136Y/D
MRF136Y
30 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FET
CASE 319B–02, STYLE 1
MAXIMUM RATINGS
Drain–Source Voltage
Rating
Drain–Gate Voltage (R_GS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Symbol
V_DSS
V_DGR
V_GS
I_D
P_D
Value
65
65
±40
5.0
100
0.571
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
T_stg
–65 to +150
°C
T_J
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
1.75
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
1