MRF151A Datasheet, PDF (4/8 Pages) Tyco Electronics – The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

TYPICAL CHARACTERISTICS
100
2000
V_DS = 30 V
V_DS = 15 V
10
1000
T_C = 25°C
12
20
V_DS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
200
00
2
4
6
8 10 12 14 16 18 20
I_D, DRAIN CURRENT (AMPS)
Figure 6. Common Source Unity Gain Frequency
versus Drain Current
30
25
20
15
10
V_DD = 50 V
I_DQ = 250 mA
P_out = 150 W
52
5
10
30
100
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency
300
200
V_DD = 50 V
100
00
f = 175 MHz
I_DQ = 250 mA
5
10
15
20
25
300
200
100
200
00
V_DD = 50 V
40 V
f = 30 MHz
I_DQ = 250 mA
1
2
3
4
5
P_in, INPUT POWER (WATTS)
Figure 8. Output Power versus Input Power
REV 1
4
25
d₃
35
45
d₅
I_DQ = 250 mA
55
V_DD = 50 V, f = 30 MHz, TONE SEPARATION = 1 kHz
25
35
d₃
45
d₅
I_DQ = 500 mA
55 _{0 20 40 60 80 100 120 140 160 180 200}
P_out, OUTPUT POWER (WATTS PEP)
Figure 9. IMD versus P_out